EDN

TSMC Intros 0.35-Micron BiCMOS Process For Wireless Applications

Taiwan Semiconductor Manufacturing Co. (TSMC) this week debuted its first 0.35-micron BiCMOS process for wireless and communications applications. TSMC (nyse: TSM), based in Hsinchu, Taiwan, said it ...
EDN

X-Fab Partners With Mentor, Expands BiCMOS Process

X-Fab Semiconductor Foundries AG today said it is expanding its existing 0.6-micron BiCMOS process, called XB06. Erfurt, Germany-based X-Fab said it would increase the number of available process ...
Electronic Design

120-Gbaud SiGe BiCMOS Electronics for Next-Gen Optical Interconnects

Scientists from imec’s IDLab demonstrated a 120-Gbaud transmitter IC that implements a SiGe BiCMOS multiplexer, equalizer, and driver. The architecture significantly increases baud rate and has a high ...
Electronic Design

BiCMOS process improves amplifier precision, power efficiency

National Semiconductor has developed a proprietary silicon-on-insulator (SOI) BiCMOS analog process technology specifically for operational amplifier applications in the 0.9 V to 12 V supply voltage ...
Design-Reuse

TowerJazz to Provide ARM Low Power Libraries for 0.13 SiGe BiCMOS and RF CMOS Platforms

MIGDAL HAEMEK, Israel--May 25, 2010--TowerJazz, the global specialty foundry leader, today announced they will be providing ARM physical IP low power std cells and memory libraries for TowerJazz’s ...
Design-Reuse

Industry s first high-performance complementary BiCMOS technology delivers performance and power advantages for essential markets and applications

Today at its annual Technology Summit in California, GlobalFoundries (GF)(Nasdaq: GFS) announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, the company’s ...