(Nanowerk News) Takashi Matsukawa and Meishoku Masahara and others, Silicon Nano-Device Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and ...

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...

As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the ...

Analog design has never been easy. Engineers can spend their entire careers focused just on phase-locked loops (PLLs), because to get them right the functionality of circuits need to be understood in ...

November 9, 2013. Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300-mm silicon wafers, through a unique silicon ...

MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...

For several generations of semiconductor technology, chip designers have derived great benefit from FinFETs, the three-dimensional field-effect transistors (FETs) marked by their thin vertical fins.