Santa Clara, Calif. — The UPD5702TU LDMOS amplifier can serve as an output stage or power amp driver in wireless base station designs. This amplifier delivers a +23-dBm output power, 26-dB gain, ...

NXP's Gen8 LDMOS RF power transistors offer more bandwidth, more power, better electrical efficiency in a smaller form factor and at a lower cost. Compared to the previous generation, Gen8 increases ...

Dallas Semiconductor introduced the DS1870, the industry's first complete LDMOS power-amp biasing and monitoring solution. The device optimally biases two LDMOS power amps over temperature and drain ...

Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...

Ampleon has launched a new line of 12V laterally diffused metal oxide semiconductor (LDMOS) transistors to support its land mobile radio portfolio. The 2V LDMOS platform is based upon the proven 9th ...

STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...

When you purchase through links on our site, we may earn an affiliate commission. Here’s how it works. The Innovator LX features modular LDMOS amplifiers that cover the entire UHF band with no ...

These will include: CLF1G0530-50, a 0.5-3GHz 50W wideband amplifier; 2.1GHz and 2.7GHz Doherty power amplifiers for base stations; and a 100W 2.5-3.5GHz amplifier called CLF1G2535-100. “NXP has ...

STMicroelectronics has signed an agreement on LDMOS – Laterally Diffused Metal Oxide Semiconductor RF power technology – from Innogration Technologies, a fabless semiconductor company headquartered in ...

DURHAM, N.C., December 12, 2011 — Cree, Inc. (Nasdaq: CREE) today announced a nonexclusive worldwide license agreement with RFHIC Corporation, a global leader in cutting-edge RF power amplifiers, ...