Rohm Semiconductor has developed a compact, high-efficiency 20-V N-channel MOSFET in a DSN1006-3 WLCSP (1.0 × 0.6 mm) package, delivering greater miniaturization for small, thin devices, including ...
A SPICE model based on the BSIM3 core eliminates shortcomings in the existing level 1 and level 3 subcircuit models, enabling better simulation of trench-type power MOSFETs. An improved SPICE model ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process [1], ...
In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices ...
Two new MOSFET devices developed by ON Semiconductor are aimed at mobile-device Li-ion battery charging and discharging protection circuit switching. Two new MOSFET devices developed by ON ...
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