KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...
The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...
Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other ...
A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
OMRON Electronic Components Europe has introduced a new range of G3VM MOSFET relays designed to deliver faster switching performance in an exceptionally small footprint, targeting advanced test and ...
Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...
ICs that go into space have testing requirements that exceed those for Earth-bound devices. I explained the process in Test power ICs to survive radiation. Now, I'll look at what happens to power ...
Suited for high-temperature burn-in PC board testing, design stage component testing/evaluation, and burn-in ovens, Sullins transistor sockets, axial sockets, MOSFET sockets, and other custom test ...
The world of power electronics witnessed a breakthrough in 1959 when Dawon Kahng and Martin Atalla invented the metal-oxide-semiconductor field-effect transistor (MOSFET) transistor at Bell Labs. The ...
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