What's needed to fill in the gaps in understanding GaN HEMTs and their catastrophic failures. Degradation mechanisms that plague GaN HEMTs. Why overvoltage ruggedness and surge-energy withstand go ...
Gallium-nitride (GaN) high electron mobility transistors (HEMTs) have a limited avalanche capability. Thus, they may frequently experience catastrophic failures in voltage overshoot up to their ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback