Abstract: Multiple parallel insulated-gate bipolar transistor (IGBT) modules can enhance the current-carrying capacity of a power converter. However, due to parameter inconsistency of IGBT modules and ...
Supports most practical Explicit Runge-Kutta (ERK) methods. Tested on SD1.5, SDXL, and SD3. Decrease it to set more strict tolerances (better results) in exchange for slower inference times. Increase ...
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Abstract: Detailed temperature field distribution of high-power insulated gate bipolar transistor (IGBT) modules is essential information for reliability analysis and thermal design of power ...
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